Use of a composition comprising diethylzinc and tricyclic aryl compound, in chemical vapor deposition process for depositing zinc oxide film, such as conductive transparent oxide film, which is useful to manufacture flat panel display

摘要

Use of a composition comprising a diethylzinc and a tricyclic aryl compound (X), in a process for depositing a zinc oxide film, is claimed. Use of a composition comprising a diethylzinc and a tricyclic aryl compound of formula (X), in a process for depositing a zinc oxide film, is claimed. R1 : H, alkyl, an olefin conjugated with aromatic ring, or optionally substituted 1-12C aryl. An independent claim is included for depositing the zinc oxide film, comprising (a) positioning a substrate in a deposition chamber, (b) vaporizing the composition, and (c) introducing, into the deposition chamber, a gaseous mixture comprising an oxygen source, such as water or an alcohol optionally containing less than 5C, and a doping product consisting of trimethylaluminum, triethylaluminum, tri-propylaluminum, diethyl ethoxide, dimethyl isopropoxide, tris(acetylacetonate) aluminum, tris(acetate) aluminum, tris(tetramethylheptadionate) aluminum, aluminum alkoxide, aluminum chloride, tris(dimethylamino) aluminum, trimethylgallium, triethylgallium, tri-propylgallium, diethylgallium ethoxide, dimethyl gallium, isopropoxide, tris(acetylacetonate)gallium, tris(acetate)gallium, tris(tetramethylheptadionate)gallium, gallium alkoxide, gallium chloride, tris(dimethylamino)gallium, diborane, trimethylborane, triethylborane, trimethylborate, tri-isopropylborate and 1,3,5-trimethylborazine. ORGANIC CHEMISTRY - Preferred Components: The diethylzinc is present at 95-99.9 wt.%, preferably 99.5 wt.%. (X) is present at 0.1-5 wt.%, preferably 0.5 wt.%. (X) is acenaphthylene. INORGANIC CHEMISTRY - Preferred Components: The zinc oxide is doped with aluminum, boron, gallium, indium, yttrium, scandium, fluorine, vanadium, silicon, germanium, titanium, zirconium or hafnium. [Image].