MANUFACTURING METHOD OF DIODE

摘要

The present invention relates to a method of manufacturing a diode. The method of manufacturing a diode according to one embodiment of the present invention includes a step of forming III-V group compound nanowires; a step of manufacturing p-n junction nanowires or nanowire arrays including the p-n junction nanowires; a step of forming a metal bonding layer in the p-n junction nanowires or the nanowire arrays including the p-n junction nanowires.