METHOD FOR MANUFACTURING NITRIDE BASED SEMICONDUCTOR DEVICE EMPLOYING RF-SPUTTERING

摘要

Disclosed is a method of manufacturing nitride based semiconductor. A manufacturing method according to the present invention includes: a step of preparing a substrate; a step of forming a buffer layer to prevent a dislocation with the substrate on the substrate; a step of forming a spacer on the buffer layer; a step of forming a barrier layer to form a heterojunction structure with the spacer on the spacer; a step of forming a protective layer on the barrier layer; and a step of forming an HfO2 layer on the protective layer by RF sputtering.