| 摘要 |
<p>Provided is a semiconductor device with high ESD withstand. A first via (16) is for an electric connection from a pad to the drain of NMOS transistor of an ESD protection circuit. The first via (16) is installed on the drain and is immediately below the pad. Therefore, the surge current of the ESD applied to the pad is uniformly supplied to all the drains. Then, each channel of the NMOS transistor of the ESD protection circuit is uniformly and easily operated, and the ESD withstand of the semiconductor device is increased.</p> |
