发明名称 |
FIN ISOLATION IN MULTI-GATE FIELD EFFECT TRANSISTORS |
摘要 |
A method for fabricating a field effect transistor (FET) device includes forming a plurality of semiconductor fins on a substrate, removing a semiconductor fin of the plurality of semiconductor fins from a portion of the substrate, forming an isolation fin that includes a dielectric material on the substrate on the portion of the substrate, and forming a gate stack over the plurality of semiconductor fins and the isolation fin. |
申请公布号 |
US2014145247(A1) |
申请公布日期 |
2014.05.29 |
申请号 |
US201213684818 |
申请日期 |
2012.11.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;HARAN BALASUBRAMANIAN S.;KHAKIFIROOZ ALI;PONOTH SHOM;STRANDAERT THEODORUS E.;YAMASHITA TENKO |
分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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