发明名称 Method for Determining Carrier Concentrations in Semiconductor Fins
摘要 A method includes probing at least one semiconductor fin using a four-point probe head, with four probe pins of the four-point probe head contacting the at least one semiconductor fin. A resistance of the at least one semiconductor fin is calculated. A carrier concentration of the semiconductor fin is calculated from the resistance.
申请公布号 US2014147943(A1) 申请公布日期 2014.05.29
申请号 US201213689262 申请日期 2012.11.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, L;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 WANN CLEMENT HSINGJEN;OKUNO YASUTOSHI;YEH LING-YEN;SHIH CHI-YUAN;SHAO YUAN-FU;TSAI WEI-CHUN
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址