发明名称 TEMPERATURE SENSOR AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an on-chip temperature sensor capable of obtaining high accuracy over a wide detection temperature range.SOLUTION: A semiconductor device includes: a temperature sensor 10 that detects an internal temperature of the semiconductor device and outputs the voltage of a level corresponding to a detection temperature; and an A/D converter that converts the output voltage of the temperature sensor 10 into a digital value. The temperature sensor 10 includes: a detection element 12 that outputs the voltage of a level corresponding to the detection temperature; a reference voltage generation unit 16 that generates a reference voltage Vref; and a differential amplifier unit that amplifies a difference voltage between an output voltage Vdi of the detection element 12 and the reference voltage Vref. The reference voltage generation unit 16, which is constituted so as to be able to generate a plurality of the reference voltages of different voltage levels from one another, outputs one reference voltage that is selected out of the plurality of reference voltages.
申请公布号 JP2014098614(A) 申请公布日期 2014.05.29
申请号 JP20120250228 申请日期 2012.11.14
申请人 RENESAS ELECTRONICS CORP 发明人 AIDA TORU;KAWAI KAZUYOSHI
分类号 G01K7/01 主分类号 G01K7/01
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