发明名称 STICTION-FREE DRYING PROCESS WITH CONTAMINANT REMOVAL FOR HIGH-ASPECT RATIO SEMICONDUCTOR DEVICE STRUCTURES
摘要 Embodiments of the invention generally relate to a method of cleaning a substrate and a substrate processing apparatus that is configured to perform the method of cleaning the substrate. More specifically, embodiments of the present invention relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention relate to a substrate processing apparatus that allows for cleaning of the substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate.
申请公布号 US2014144462(A1) 申请公布日期 2014.05.29
申请号 US201314078373 申请日期 2013.11.12
申请人 APPLIED MATERIALS, INC. 发明人 VERHAVERBEKE STEVEN;CHEN HAN-WEN;GOUK ROMAN
分类号 H01L21/02;H01L21/67 主分类号 H01L21/02
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