发明名称 CONTROLLING OF PHOTO-GENERATED CHARGE CARRIERS
摘要 Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region
申请公布号 US2014145281(A1) 申请公布日期 2014.05.29
申请号 US201314093172 申请日期 2013.11.29
申请人 INFINEON TECHNOLOGIES AG 发明人 BEVER THOMAS;FEICK HENNING;OFFENBERG DIRK;PARASCANDOLA STEFANO;UHLIG INES;KAUTZSCH THORALF;MEINHOLD DIRK;MELZNER HANNO
分类号 H01L31/0352;H01L31/18 主分类号 H01L31/0352
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