RESISTIVE MEMORY DEVICE HAVING SELECTED SENSING OPERATION AND THEREFORE ACCESS CONTROL METHOD

摘要

A resistive memory device having a selective sensing operation and an access operation control method thereof are disclosed. For the method for controlling a read operation of the resistive memory device according to the present invention, start timing of a bit line sensing operation starts after a read command is applied. When at least one word line among a plurality of word lines is activated in response to an active command, data stored in a memory cell corresponding to a selected page among all memory cells connected to the activated word line is sensed through a bit line sense amplifier after receiving the read command. According to the present invention, a chip size of the resistive memory device is reduced as a number of installed bit line sense amplifiers reduces while supporting a page open policy. In addition, power consumption and noise are also reduced during the memory operation since the selective sensing operation is implemented for a selected memory cell.