发明名称
摘要 <p>A light emitting diode (LED) for achieving an asymmetric light output includes a multilayered structure comprising a p-n junction, where at least one layer of the multilayered structure comprises a surface configured to provide a peak emission in a direction away from a normal to a mounting surface, the surface being a top or bottom surface of the layer.</p>
申请公布号 JP2014513440(A) 申请公布日期 2014.05.29
申请号 JP20140509306 申请日期 2012.04.23
申请人 发明人
分类号 H01L33/20;H01L33/08;H01L33/10;H01L33/58 主分类号 H01L33/20
代理机构 代理人
主权项
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