| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method for etching a wide-gap semiconductor substrate with high accuracy.SOLUTION: An inactive gas is supplied into a processing chamber and is brought into a plasma state. A bias potential is applied on a base for mounting a wide-gap semiconductor substrate. Ions generated when the inactive gas having been brought into the plasma state, are made to enter the semiconductor substrate on the base for heating the semiconductor substrate. After the temperature of the semiconductor substrate reaches 200°C-400°C for etching, etching gas is supplied into the processing chamber and is brought into the plasma state. The bias potential is applied on the base, and the semiconductor substrate is etched while maintaining the temperature of the semiconductor substrate at the etching temperature. |
