| 摘要 |
A method of fabricating a through silicon via structure includes the following steps. At first, a substrate is provided, and a dielectric layer is formed on the substrate. Subsequently, at least one first opening is formed in the dielectric layer, and the substrate exposed by the first opening is partially removed to form at least one via opening. A conductive material layer is then formed to fill the via opening and the first opening, and the conductive material layer is planarized. |
