发明名称 |
MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DIFFERENTIAL BIT CELL AND METHOD OF USE |
摘要 |
A MRAM bit cell including a first magnetic tunnel junction (MTJ) connected to a first data line and a second MTJ connected to a second data line. The MRAM bit cell further includes a first transistor having a first terminal connected to the first MTJ and a second terminal connected to the second MTJ. The MRAM bit cell further includes a second transistor having a first terminal connected to a driving line and a second terminal connected to the first MTJ. The MRAM bit cell further includes a third transistor having a first terminal connected to the driving line and a second terminal connected to the second MTJ. A method of using the MRAM bit cell is also described. |
申请公布号 |
US2014146599(A1) |
申请公布日期 |
2014.05.29 |
申请号 |
US201213689105 |
申请日期 |
2012.11.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
ROMANOVSKYY SERGIY |
分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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