发明名称 HYBRID LASER AND PLASMA ETCH WAFER DICING USING SUBSTRATE CARRIER
摘要 Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier.
申请公布号 US2014144585(A1) 申请公布日期 2014.05.29
申请号 US201414166715 申请日期 2014.01.28
申请人 SINGH SARAVJEET;EATON BRAD;KUMAR AJAY;LEI WEI-SHENG;HOLDEN JAMES M.;YALAMANCHILI MADHAVA RAO;EGAN TODD J. 发明人 SINGH SARAVJEET;EATON BRAD;KUMAR AJAY;LEI WEI-SHENG;HOLDEN JAMES M.;YALAMANCHILI MADHAVA RAO;EGAN TODD J.
分类号 H01L21/67 主分类号 H01L21/67
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