SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a sputtering target having low resistance and high density.SOLUTION: Provided is a sputtering target which consists of an oxide containing an indium element (In), tin element (Sn), zinc element (Zn) and aluminum element (Al) and which contains a homologous structure compound represented by InO(ZnO)(n is 2-20) and a spinel structure compound represented by ZnSnO.