| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit increase in oxygen deficiency in an oxide semiconductor layer; and provide a semiconductor device having good electric characteristics; and provide a semiconductor device having high reliability.SOLUTION: In a semiconductor device including an oxide semiconductor layer in a channel formation region, by using an oxide insulation film provided in contact with a downside of the oxide semiconductor layer and a gate insulation film provided in contact with an upper side of the oxide semiconductor layer, oxygen in the oxide insulation film and the gate insulation film is supplied to the oxide semiconductor layer. In addition, by using a conductive nitride as a metal film used for each of a source electrode layer, a drain electrode layer and a gate electrode layer, diffusion of oxygen to the metal film is inhibited. |
