发明名称 Semiconductor Device, Display Device, and Electronic Device
摘要 To prevent an influence of normally-on characteristics of the transistor which a clock signal is input to a terminal of, a wiring to which a first low power supply potential is appled and a wiring to which a second low power supply potential lower than the first low power supply potential is applied are electrically connected to a gate electrode of the transistor. A semiconductor device including the transistor can operate stably.
申请公布号 US2014145625(A1) 申请公布日期 2014.05.29
申请号 US201314090209 申请日期 2013.11.26
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;MIYAKE HIROYUKI;MATSUBAYASHI DAISUKE
分类号 H05B37/00;H01L27/088 主分类号 H05B37/00
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