发明名称 |
Semiconductor Device, Display Device, and Electronic Device |
摘要 |
To prevent an influence of normally-on characteristics of the transistor which a clock signal is input to a terminal of, a wiring to which a first low power supply potential is appled and a wiring to which a second low power supply potential lower than the first low power supply potential is applied are electrically connected to a gate electrode of the transistor. A semiconductor device including the transistor can operate stably. |
申请公布号 |
US2014145625(A1) |
申请公布日期 |
2014.05.29 |
申请号 |
US201314090209 |
申请日期 |
2013.11.26 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;MIYAKE HIROYUKI;MATSUBAYASHI DAISUKE |
分类号 |
H05B37/00;H01L27/088 |
主分类号 |
H05B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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