| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor device having a long carrier lifetime without performing an additional process after manufacturing an SiC single crystal substrate by a chemical vapor deposition method.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises: adjusting a temperature inside a reaction furnace to 1700°C (step S5); subsequently, introducing a material gas, an added gas, a doping gas and a carrier gas into the reaction furnace (step S6); subsequently, growing an SiC epitaxial film on a surface of a 4H-SiC substrate by a CVD method (step S7); subsequently, cooling the 4H-SiC substrate on which the SiC epitaxial film is stacked in an atmosphere of a hydrogen gas diluted methyl methane gas until the temperature inside the reaction furnace decreases from 1700°C to 1300°C (step S8); and subsequently, cooling the 4H-SiC substrate on which the SiC epitaxial film is stacked in a hydrogen gas atmosphere until the temperature inside the reaction furnace decreases to a temperature lower than 1300°C (step S9). |
