| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a good pattern using a self-assembled block copolymer material.SOLUTION: A method for forming a pattern includes: a step of obtaining a self-assembled block copolymer layer (21) on a neutral layer (22'') overlying a substrate (23), the self-assembled block copolymer layer including at least two polymer components having mutually different etching resistances, and furthermore having a copolymer pattern structure formed by micro-phase separation of the at least two polymer components; a step of selectively etching a first polymer component of the self-assembled block copolymer layer (21) so that a second polymer component (24) remains; and a step (16) of applying plasma etching to the neutral layer (22'') using the second polymer component (24) as a mask. The plasma etching is performed using inert gas and H. |
