SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor device which has a small S value and inhibits decrease in an on-state current and which is highly responsive.SOLUTION: In a semiconductor device manufacturing method, a semiconductor layer in which a film thickness of a source region or a drain region is thicker than a film thickness of a channel formation region is formed. A manufacturing method of the semiconductor device using such semiconductor layer comprises: forming a first semiconductor layer on a substrate; forming a first insulation layer and a conductive layer on the first semiconductor layer; forming a second insulation layer on lateral faces of the conductive layer; forming a second semiconductor layer on the first insulation layer, the conductive layer and the second insulation layer; and forming the semiconductor layer having an uneven shape by etching the second semiconductor layer by using a resist partially provided as a mask and performing a heat treatment on the first semiconductor layer and the second semiconductor layer.