REFLECTIVE MASK BLANK, AND METHOD OF MANUFACTURING REFLECTIVE MASK

摘要

PROBLEM TO BE SOLVED: To obtain a manufacturing method for suppressing generation of defects in a pattern formation region and for forming a linear-outline reference mark in the case that a reference mark is formed using a photolithography method in a reflective mask blank for EUV lithography.SOLUTION: Provided is a method of manufacturing a reflective mask blank having a reflection thin-film including a multilayer reflection film on a main surface of a mask blank substrate. The method of manufacturing a reflective mask blank includes a reference mark formation step of forming a resist layer on an upper surface of the reflection thin-film and removing at least a part of the multilayer reflection film by a lithography process using the resist layer to form a reference mark that is a reference for a defect position in defect information on the reflective mask blank. The reference mark formation step includes a predetermined dripping step and a uniformization step.