| 摘要 |
<p>To suppress an increase in a polishing rate and deterioration of uniformity within a plane in a wafer due to shortage of the polishing rate in a central part of the wafer, a polishing pad at least includes a polishing layer, and a cushion layer, in which a plurality of holes is provided in the polishing layer, the holes passing through the polishing layer in a thickness direction, and a plurality of grooves is provided in a polishing surface of the polishing layer, a through hole ratio is from 0.13% or more to 2.1% or less, and angles made by the polishing surface and side surfaces of the groove, which continue to the polishing surface, is from 105 degrees or more to 150 degrees or less.</p> |
