METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND METHOD FOR MANUFACTURING SOLID STATE IMAGE SENSOR

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial silicon wafer capable of suppressing metal pollution by exerting higher gettering capability, and having no epitaxial defect caused by dislocation clusters and COP, and method for manufacturing the same.SOLUTION: A method for manufacturing an epitaxial silicon wafer 100 comprises: a first step for forming a modified layer 18 in which composing elements of a cluster ion 16 are solidly solved therein, on a surface 10A of the silicon wafer by irradiating the cluster ion 16 to the silicon wafer 10 not containing dislocation clusters and COP; and a second step for forming an epitaxial layer 20 on the modified layer 18 of the silicon wafer 10.