| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method by which when etching a first layer including a titanium nitride (TiN), the post-etching evenness can be achieved on the surfaces of the TiN layer and a metal layer, and to provide an etchant used therefor, and a method for manufacturing a semiconductor device which uses the etching method.SOLUTION: An etching method comprises a process for processing a substrate having a first layer including a titanium nitride (TiN) and a second layer including a transition metal. The process includes the steps of: picking out the substrate having the first layer whose surface oxygen content is 0.1-10 mol%; and removing the first layer by applying, to the first layer of the substrate, an etchant including a hydrofluoric acid compound and an oxidizer. |
