| 摘要 |
A photoelectric conversion element of an embodiment includes: a back electrode; a heterojunction-type light absorbing layer on the back electrode, containing Cu, selected from Al, In and Ga, and selected from Se and S, and having a chalcopyrite structure; a transparent electrode on the light absorbing layer, wherein aback electrode side-part of the light absorbing layer is of p-type, and a transparent electrode-side part of the light absorbing layer is of n-type, the light absorbing layer has a part with an average crystal grain size of 1,000 nm to 3,000 nm in the vicinity of the back electrode, and the light absorbing layer has apart with an average crystal grain size of at most 500 nm in the vicinity of the transparent electrode or the light absorbing layer has an amorphous part in the vicinity of the transparent electrode. |
