发明名称 |
REPLACEMENT METAL GATE TRANSISTORS USING BI-LAYER HARDMASK |
摘要 |
Methods of fabricating replacement metal gate transistors using bi-layer a hardmask are disclosed. By utilizing a bi-layer hardmask comprised of a first layer of nitride, followed by a second layer of oxide, the topography issues caused by transition regions of gates are mitigated, which simplifies downstream processing steps and improves yield. |
申请公布号 |
US2014148003(A1) |
申请公布日期 |
2014.05.29 |
申请号 |
US201213684869 |
申请日期 |
2012.11.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LEOBANDUNG EFFENDI;COTE WILLIAM;ECONOMIKOS LAERTIS;KIM YOUNG-HEE;PARK DAE-GYU;STANDAERT THEODORUS EDUARDUS;STEIN KENNETH JAY;SUH YS;YANG MIN |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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