| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which improves device characteristics of a first region by diffusing hydrogen atoms in the first region and which prevents deterioration of device characteristics in a second region by preventing diffusion of excessive hydrogen atoms in the second region.SOLUTION: A semiconductor device comprises: a semiconductor substrate 1 including a first region and a second region; a hydrogen diffusion prevention film 45 which is provided on the first and second regions and has a first opening in the first region; a conductive layer 32b buried in the first opening; an information storage element 48 electrically connected with the conductive layer 32b; a hydrogen supply film 27 which covers the information storage element 48 in the first region and contacts the hydrogen diffusion prevention film 45 in the second region to cover the hydrogen diffusion prevention film 45; and a second opening which is opened through both of the hydrogen supply layer 27 and the hydrogen diffusion prevention film 45 in the second region.</p> |
