| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a Cu-Ga binary sputtering target excellent in machinability, and having high density and high deflective strength, and to provide a production method thereof.SOLUTION: A Cu-Ga binary sputtering target has a component composition containing Ga:28-35 atom%, and having a residue comprising Cu and inevitable impurities, and further has a coexistent structure containing Ga:26 atom% or less, and having a residue in which a low Ga-containing Cu-Ga binary alloy phase comprising Cu is enclosed by a high Ga-containing Cu-Ga binary alloy phase comprising Ga:28 atom% or more.</p> |
