SOLAR CELL MANUFACTURED USING CVD EPITAXIAL Si FILM ON METALLURGICAL-GRADE Si WAFER

摘要

PROBLEM TO BE SOLVED: To provide a solar cell manufactured using a CVD epitaxial Si film on a metallurgical-grade Si wafer.SOLUTION: One embodiment of the present invention provides a method for manufacturing a solar cell. The method includes the steps of: melting a metallurgical-grade (MG) Si feedstock; bringing a single-crystal Si seed into contact with a surface of the molten MG-Si by lowering the seed; slowly pulling out a single-crystal Si ingot of the molten MG-Si; processing the Si ingot into a single crystal Si wafer to form an MG-Si substrate for subsequent epitaxial growth; leaching out a residual metal impurity in the MG-Si substrate; epitaxially growing a layer of a single-crystal Si thin film doped with boron on the MG-Si substrate; forming an emitter layer by doping phosphor into the single-crystal Si thin film; depositing an anti-reflection layer on top of the single-crystal Si thin film; and forming a front and back electric contact.