| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of forming a low dielectric constant dielectric film capable of preventing any other film than an SiOCH film or a structure from being adversely influenced by heating.SOLUTION: An SiOCH film containing a number of minute porogen is deposited on a wafer W. The wafer W is heated to a base temperature which is e.g., equal to or higher than 360°C and equal to or lower than 430°C, and the SiOCH film is irradiated with ultraviolet light. A surface of the SiOCH film is scanned by infrared laser light, and the SiOCH film is heated to a spike temperature which is e.g., equal to or higher than 500°C and equal to or lower than 700°C. The irradiation time of infrared laser light is shorter than the time required for the SiOCH film to be heated to the base temperature, and settled e.g., equal to or shorter than 2 sec.</p> |
