发明名称 |
DEEP TRENCH STRUCTURE FOR HIGH DENSITY CAPACITOR |
摘要 |
Some embodiments relate to high density capacitor structures. Some embodiments include a semiconductor substrate having an conductive region with a plurality of trenches formed therein. A first dielectric layer is formed over respective bottom portions and respective sidewall portions of the respective trenches. A first conductive layer is formed in the trench and over the first dielectric layer, wherein the first dielectric layer acts as a first capacitor dielectric between the conductive region and the first conductive layer. A second dielectric layer is formed in the trench and over the first conductive layer. A second conductive layer is formed in the trench and over the second dielectric layer, wherein the second dielectric layer acts as a second capacitor dielectric between the first conductive layer and the second conductive layer. Other embodiments are also disclosed. |
申请公布号 |
US2014145299(A1) |
申请公布日期 |
2014.05.29 |
申请号 |
US201213685029 |
申请日期 |
2012.11.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
KALNITSKY ALEX;TSUI FELIX YING-KIT;CHENG HSIN-LI;YANG JING-HWANG;LIN JYUN-YING |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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