发明名称 |
POWER SEMICONDUCTOR DEVICE |
摘要 |
Disclosed herein is a power semiconductor device. The power semiconductor device includes a second conductive type first junction termination extension (JTE) layer that is formed so as to be in contact with one side of the second conductive type well layer, a second conductive type second JTE layer that is formed on the same line as the second conductive type first JTE layer, and is formed so as to be spaced apart from the second conductive type first JTE layer in a length direction of the substrate, and a poly silicon layer that is formed so as to be in contact with the second conductive type well layer and an upper portion of the second conductive type first JTE layer. |
申请公布号 |
US2014145291(A1) |
申请公布日期 |
2014.05.29 |
申请号 |
US201313795858 |
申请日期 |
2013.03.12 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
SONG IN HYUK;UM KEE JU;JANG CHANG SU;PARK JAE HOON;SEO DONG SOO |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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