| 发明名称 |
NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND CHANNELS AND METHODS OF FORMING THE SAME |
| 摘要 |
A non-volatile memory device can include a plurality of immediately adjacent offset vertical NAND channels that are electrically coupled to a single upper select gate line or to a single lower select gate line of the non-volatile memory device. |
| 申请公布号 |
US2014145255(A1) |
申请公布日期 |
2014.05.29 |
| 申请号 |
US201414171074 |
申请日期 |
2014.02.03 |
| 申请人 |
SEOL KWANG SOO;KIM SUKPIL;PARK YOONDONG |
发明人 |
SEOL KWANG SOO;KIM SUKPIL;PARK YOONDONG |
| 分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
| 代理机构 |
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