| 摘要 |
A semiconductor manufacturing apparatus component (101), to which a nitride semiconductor expressed by a general formula of AlxInyGa1-x-yN (provided that, x and y satisfy relationships of 0≰x<1, 0≰y<1, and 0≰x+y<1) adheres, is disposed inside a washing apparatus (100) provided with a gas introducing pipe (104) and a gas discharging pipe (105). After the inside of the apparatus is set to a decompressed state, a halogen-containing gas is introduced from the gas introducing pipe (104) to set a pressure inside the apparatus to be equal to or more than 10 kPa and equal to or less than 90 kPa. Then, the halogen-containing gas is retained inside the apparatus to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component (101). |
