| 摘要 |
Avalanche photodetector element for converting an optical signal to an electrical signal, comprising an input waveguide (2) and an intrinsic semiconducting material (3), at least one p-doped region (4) and at least one n-doped region (5) is provided in the semiconducting material (3), the doped regions (4, 5) and the intrinsic semiconducting material (3) forming at least one PIN-junction avalanche photodiode (6), the input waveguide (2) and the intrinsic semiconducting material (3) being arranged with respect to each other such that optical waves conducted by the input waveguide (2) are substantially conducted into the intrinsic semiconducting material (3) to the PIN-junction avalanche photodiode (6) converting the optical signal to an electrical signal, the semiconducting material (3) comprises at least one array of p-doped regions (4) or n-doped regions (5). Within the array of doped regions the different doped regions are small, thereby the electric field strength will increase in the proximity of the doped regions without having to increase the reverse bias potential. |
