发明名称 Verfahren zur Herstellung eines halbleitenden Elektrodensystems mit einem Körper aus einem halbleitenden Selenid oder Tellurid eines zweiwertigen Metalles
摘要 A noble metal layer is applied to a semi-conductive body of a selenide or telluride of a bivalent metal (noble metal is defined as a metal which is higher in the electromotive series than the bivalent metal) by contacting the body with a solution of a salt of a noble metal so that the noble metal precipitates on the body and the bivalent metal is dissolved. The noble metal may subsequently be removed and a different noble metal applied as by evaporation. Bivalent metals referred to are Zn, Cd, Hg, Sn and Pb, and the noble metal may be Ag, Au, Hg, Pt or Rh. The examples disclose the coating of CdTe and HgSe bodies, and salts used are AgNO3, AuCl3, PtCl4 and RhCl3: one example refers to the removal of an Au layer from CdTe by treatment with a KCN solution, and then coating with Ir by evaporation. The semi-conductive body may be used to provide a rectifier, transistor, photo-conductive or photo-voltaic cell.
申请公布号 CH354169(A) 申请公布日期 1961.05.15
申请号 CHD354169 申请日期 1955.12.05
申请人 N.V. PHILIPS' GLOEILAMPENFABRIEKEN 发明人 NOBEL,DIRK DE
分类号 H01L21/00;H01L21/06;H01L21/441;H01L21/445;H01L31/0224 主分类号 H01L21/00
代理机构 代理人
主权项
地址