| 摘要 |
<p>P-type dopants are implanted to form an implanted area (81) on a layer (41), an upper portion of the layer and implanted area is removed by maintaining vapor phase epitaxy conditions, removal is stopped when density of dopant is maximum, a layer (42) is formed on implanted area and layer (41) by vapor phase epitaxy. A layer (6) is formed by vapor phase epitaxy to form an electron gas layer (5) on an interface between the layers (41, 42), and a control gate (73) is formed on the layer (6) plumb with the implanted area to obtain a heterojunction field-effect transistor (1). P-type dopants are implanted to form an implanted area on a layer (41), an upper portion of the layer and implanted area is removed by maintaining vapor phase epitaxy conditions, removal is stopped when the density of dopant is maximum, a layer (42) is formed on the implanted area and the layer (41) by vapor phase epitaxy. A layer (6) is formed by vapor phase epitaxy to form an electron gas layer on an interface between the layers, and a control gate is formed on the layer (6) plumb with the implanted area to obtain a heterojunction field-effect transistor. The layers are made of III-V semiconductor alloy.</p> |
