发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE
摘要 <p>Provided is a thin film transistor array substrate. The thin film transistor array substrate provided in the present invention comprises a thin film transistor which is formed on a substrate and includes a drain electrode; an organic insulation film which is formed on the thin film transistor and has a first contact hole formed to at least partially expose the drain electrode; a connection electrode which is formed on the organic insulation film and in contact with the drain electrode through the first contact hole; a common electrode which is formed on the organic insulation film and spaced apart from the connection electrode; a passivation film which is formed on the common electrode and the connection electrode and has a second contact hole formed to at least partially expose the connection electrode; and a pixel electrode which is formed on the passivation film and in contact with the connection electrode through the second contact hole.</p>
申请公布号 KR20140064083(A) 申请公布日期 2014.05.28
申请号 KR20120131002 申请日期 2012.11.19
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 CHO, SUNG HO;PARK, JIN SUK
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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