发明名称 |
Projection exposure system e.g. EUV projection exposure system for e.g. semiconductor lithography, has shape memory element with martensite start temperature at which transition from martensite state into austenitic state begins |
摘要 |
<p>The system has two frictional interconnected elements (1,2) and shape-memory element (6) that provides frictional connection. The shape memory element has austenite start temperature at which the transition from martensite state to austenitic state begins, austenite finish temperature at which the memory element is completely in austenitic state. - The shape memory element has martensite start temperature at which the transition from martensite state into austenitic state begins and martensite finish temperature at which memory element is located in martensite state.</p> |
申请公布号 |
DE102013209012(A1) |
申请公布日期 |
2014.05.28 |
申请号 |
DE201310209012 |
申请日期 |
2013.05.15 |
申请人 |
CARL ZEISS SMT GMBH |
发明人 |
HARTJES, JOACHIM |
分类号 |
G02B7/182;G02B5/09;G03F7/20 |
主分类号 |
G02B7/182 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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