发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 A substrate processing apparatus of the present invention comprises: a processing chamber in which an opening is provided on one side and a deposition process takes places on a substrate; a vacuum device which creates a vacuum environment inside of the processing chamber through the opening of the processing chamber; and a heat blocking device which is disposed between the processing chamber and the vacuum device, and blocks radiant heat generated during the deposition process of the processing chamber from flowing into the vacuum device.
申请公布号 KR20140063926(A) 申请公布日期 2014.05.28
申请号 KR20120130637 申请日期 2012.11.19
申请人 WONIK IPS CO., LTD. 发明人 HWANG, SE HAN;HONG, JEONG WOO
分类号 H01L51/56;H05B33/10 主分类号 H01L51/56
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