| 摘要 |
<p>A thin film transistor array substrate for a digital X-ray detector capable of reducing leakage current of a thin film transistor and noise of output signal by applying a gate voltage, rather than a bias voltage, to a light-shielding layer to shield a channel region of the thin film transistor, wherein the substrate includes: a plurality of gate lines to supply a scan signal; a plurality of data lines arranged in a vertical direction to the gate lines to output a data; a photodiode formed in each of cell regions defined by the gate lines and the data lines to perform photoelectric conversion; the photodiode including a first electrode 8, a semiconductor layer 9 and a second electrode 10 laminated in this order; a thin film transistor formed at each of intersections between the gate lines and the data lines to output the photoelectric conversion signal from the photodiode to the data lines in response to the scan signal of the gate lines; a plurality of bias lines to apply a bias voltage to the photodiode; and a light-shielding layer 13 over a channel region of the thin film transistor, the light-shielding layer 13 electrically connected to the gate lines. Also disclosed is a thin film transistor array substrate for a digital X-ray detector comprising: substrate 1; a thin film transistor comprising a gate electrode 2, a gate dielectric 3, source and drain electrodes 4a,4b, and a channel 5; interlayer dielectrics 7,11; photodiode 8,9,10; and a light shield layer 13; wherein the light shield layer 13 and the gate electrode 2 are connected to a gate line.</p> |
