| 摘要 |
<p>873,539. Semi-conductor devices. STANDARD TELEPHONE & CABLES Ltd. May 9, 1960, No. 16275/60. Class 37. An indium antimonide transistor is provided with means for maintaining its temperature below 100‹ K. Fig. 1 shows such a transistor of NPN type. The indium antimonide base region 1 is doped with cadmium and the emitter and collector regions 2, 3 with tellurium. The base region is mounted on a copper member 4 while copper wires are connected to the emitter and collector regions 2, 3. The whole is sealed in a glass envelope 7 by member 8. In operation the transistor is immersed in a liquid helium bath with other devices and a store composed of superconductive switching elements. The Specification explains that the very small energy gap of indium antimonide makes it unsuitable for use at room temperatures but below 150‹ K the effect of charge carriers supplied by the doping elements becomes important. Zinc and selenium are suggested as doping elements and liquid neon, nitrogen, oxygen or hydrogen for the cooling bath.</p> |
