| 摘要 |
A flash memory and a driving method thereof are provided to remove interference of adjacent cells by easily depleting a body region of a memory cell formed on a semiconductor pin. A local bit line is connected with a bit line on a semiconductor substrate(110) of first conductive type. A local source line is connected with a common source line crossing the bit line. Plural memory cells are connected parallel with the local source line and the bit line. The local bit line and the local source line are vertically spaced apart from each other in the semiconductor substrate, and include a first doped layer(121) and a second doped layer(122). A first select transistor connects the bit line with the local bit line, and a second select transistor connects the common source line with the local source line. A drain select line(DSL) and a source select line(SSL) are connected to the first select transistor and the second select transistor, respectively. Plural word lines are connected to the memory cells. |
