发明名称 |
Methods and layers for metallization |
摘要 |
One aspect of the present invention is a method of making an electronic device. According to one embodiment, the method comprises depositing a cap layer containing at least one dopant onto a gapfill metal and annealing so that the at least one dopant migrates to grain boundaries and/or interfaces of the gapfill metal. Another aspect of the present invention is an electronic device. |
申请公布号 |
US8736055(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US201213409547 |
申请日期 |
2012.03.01 |
申请人 |
KOLICS ARTUR;PRAVEEN NALLA;LAM RESEARCH CORPORATION |
发明人 |
KOLICS ARTUR;PRAVEEN NALLA |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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