发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A nonvolatile semiconductor memory device includes: a first interconnect; a second interconnect at a position opposing the first interconnect; and a variable resistance layer between the first interconnect and the second interconnect, the variable resistance layer being capable of reversibly changing between a first state and a second state by a voltage applied via the first interconnect and the second interconnect or a current supplied via the first interconnect and the second interconnect, the first state having a first resistivity, the second state having a second resistivity higher than the first resistivity. Wherein the variable resistance layer has a compound of carbon and silicon as a main component and including hydrogen. |
申请公布号 |
US8735859(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US201013512774 |
申请日期 |
2010.11.29 |
申请人 |
KUBOI SHUICHI;TAKATA MASAYUKI;NAKAI TSUKASA;FUKUMIZU HIROYUKI;NOJIRI YASUHIRO;OOTSUKA KENICHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KUBOI SHUICHI;TAKATA MASAYUKI;NAKAI TSUKASA;FUKUMIZU HIROYUKI;NOJIRI YASUHIRO;OOTSUKA KENICHI |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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