发明名称 |
SELECT DEVICE FOR CROSS POINT MEMORY STRUCTURES |
摘要 |
<p>The present disclosure provides a memory cell that includes a resistive memory element disposed between a first conductor and a second conductor, the first conductor and the second conductor configured to activate the resistive memory element. The memory cell also includes a backward diode disposed in series with the memory element between the memory element and either the first conductor or the second conductor.</p> |
申请公布号 |
KR20140063821(A) |
申请公布日期 |
2014.05.27 |
申请号 |
KR20147009994 |
申请日期 |
2011.10.12 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
RIBEIRO GILBERTO M.;NICKEL JANICE H. |
分类号 |
G11C13/00;G11C5/02;G11C7/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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