发明名称 |
Integrated circuit resistor fabrication with dummy gate removal |
摘要 |
Methods of fabricating a semiconductor device including a metal gate transistor and a resistor are provided. A method includes providing a substrate including a transistor device region and an isolation region, forming a dummy gate over the transistor device region and a resistor over the isolation region, and implanting the resistor with a dopant. The method further includes wet etching the dummy gate to remove the dummy gate, and then forming a metal gate over the transistor device region to replace the dummy gate. |
申请公布号 |
US8735258(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US201213343903 |
申请日期 |
2012.01.05 |
申请人 |
KO CHUN-HUNG;CHEN JYH-HUEI;WANG SHYH-WEI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KO CHUN-HUNG;CHEN JYH-HUEI;WANG SHYH-WEI |
分类号 |
H01L21/02;H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|