发明名称 |
Integrated circuit transistors with multipart gate conductors |
摘要 |
Metal-oxide-semiconductor transistors are provided. A metal-oxide-semiconductor transistor may be formed on a semiconductor substrate. Source and drain regions may be formed in the substrate. A gate insulator such as a high-K dielectric may be formed between the source and drain regions. A gate may be formed from multiple gate conductors. The gate conductors may be metals with different workfunctions. A first of the gate conductors may form a pair of edge gate conductors that are adjacent to dielectric spacers. An opening between the edge gate conductors may be filled with the second gate conductor to form a center gate conductor. A self-aligned gate formation process may be used in fabricating the metal-oxide-semiconductor transistor. |
申请公布号 |
US8735983(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US20080324791 |
申请日期 |
2008.11.26 |
申请人 |
LIU JUN;RATNAKUMAR ALBERT;XIANG QI;TUNG JEFFREY XIAOQI;ALTERA CORPORATION |
发明人 |
LIU JUN;RATNAKUMAR ALBERT;XIANG QI;TUNG JEFFREY XIAOQI |
分类号 |
H01L21/02;H01L21/28;H01L21/336;H01L21/8238;H01L29/49;H01L29/66 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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