发明名称 |
Nitride based semiconductor device and method for manufacturing the same |
摘要 |
Disclosed herein is a nitride based semiconductor device including: a base substrate; an epitaxial growth layer disposed on the base substrate and generating a 2-dimensional electron gas in an inner portion thereof; and an electrode structure disposed on the epitaxial growth layer, wherein the electrode structure includes: a gate electrode; a source electrode disposed at one side of the gate electrode; and a drain electrode disposed at the other side of the gate electrode and having an extension part extended to the inner portion of the epitaxial growth layer to contact the 2-dimensional electron gas. |
申请公布号 |
US8735941(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US201113049594 |
申请日期 |
2011.03.16 |
申请人 |
PARK KIYEOL;JEON WOOCHUL;PARK YOUNGHWAN;SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK KIYEOL;JEON WOOCHUL;PARK YOUNGHWAN |
分类号 |
H01L29/66;H01L27/148 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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